Description
General part information
BAT1504 Series
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Technical Specifications
Parameters and characteristics for this part
| Specification | BAT1504RE6152HTSA1 |
|---|---|
| Capacitance | 0.25 pF |
| Current - Max | 110 mA |
| Diode Pair Configuration | Series Connection |
| Diode Pair Count | 1 |
| Diode Type | Schottky |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | PG-SOT23 |
| Resistance | 18 Ohm |
| Voltage - Peak Reverse (Max) | 4 V |
Pricing
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CAD
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