BDX53C

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STMicroelectronics

PTD HIGH VOLTAGE ROHS COMPLIANT: YES

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STMicroelectronics

PTD HIGH VOLTAGE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BDX53C	BDX53C Series

	-	-
Current - Collector (Ic) (Max) [Max]	8 A	8 A
Current - Collector Cutoff (Max) [Max]	500 çA	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 hFE	750 hFE
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-220-3	TO-220-3
Power - Max [Max]	60 W	60 W
Supplier Device Package	TO-220	TO-220
Vce Saturation (Max) @ Ib, Ic	2 V	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

NPN power Darlington transistor

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case
STMicroelectronics BDX53C
STMicroelectronics BDX53C
STMicroelectronics BDX53C	Through Hole	100 V	150 °C	60 W	TO-220	2 V	8 A	500 çA	750 hFE	TO-220-3

General part information

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Technical documentation and resources