Catalog
NPN power Darlington transistor
Description
AI
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
NPN power Darlington transistor
NPN power Darlington transistor
| Part | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Power - Max [Max] | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BDX53C | ||||||||||
STMicroelectronics BDX53C | ||||||||||
STMicroelectronics BDX53C | Through Hole | 100 V | 150 °C | 60 W | TO-220 | 2 V | 8 A | 500 çA | 750 hFE | TO-220-3 |