Specification	SIZ350DT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	18.5 A
Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	20.3 nC
Input Capacitance (Ciss) (Max)	940 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	3 mm
Package Name	8-Power33
Package Width	3 mm
Power - Max (Ta)	3.7 W
Power - Max (Tc)	16.7 W
Rds On (Max)	6.75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.4 V

SIZ350 Series

Part	Technology	Package Name	Package Length	Package Width	Rds On (Max)	Drain to Source Voltage (Vdss)	Power - Max (Tc)	Power - Max (Ta)	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
Vishay Dale SIZ350DT-T1-GE3	MOSFET (Metal Oxide)	8-Power33	3 mm	3 mm	6.75 mOhm	30 V	16.7 W	3.7 W	2.4 V	Surface Mount	30 A	18.5 A	940 pF	2	N-Channel	Dual	20.3 nC	-55 °C	150 °C	8-PowerWDFN

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