IGP30N60H3XKSA1

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Infineon Technologies

THE IGP30N60H3 IS A 600 V, 30 A IGBT3 IN TO220 PACKAGE

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IGP30N60H3XKSA1

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Infineon Technologies

THE IGP30N60H3 IS A 600 V, 30 A IGBT3 IN TO220 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IGP30N60H3XKSA1

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	165 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-220-3
Power - Max [Max]	187 W
Supplier Device Package	PG-TO220-3-1
Switching Energy	1.17 mJ
Td (on/off) @ 25°C	18 ns, 207 ns
Test Condition	400 V, 10.5 Ohm, 15 V, 30 A
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

IGP30N60 Series

Part	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Switching Energy	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Test Condition	Td (on/off) @ 25°C	IGBT Type	Supplier Device Package
Infineon Technologies IGP30N60H3XKSA1	187 W	2.4 V	165 nC	-40 C	175 °C	120 A	1.17 mJ	TO-220-3	Through Hole	600 V	60 A	10.5 Ohm 15 V 30 A 400 V	18 ns 207 ns	Trench Field Stop	PG-TO220-3-1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.98
		50	$ 2.39
		100	$ 1.97
		500	$ 1.67
		1000	$ 1.41
		2000	$ 1.34
		5000	$ 1.29
Newark	Each	1	$ 3.41
		10	$ 2.82
		100	$ 1.73
		500	$ 1.40
		1000	$ 1.23

Description

General part information

IGP30N60 Series

The IGP30N60H3 is a High Speed IGBT in Trench and field-stop technology. The high speed device is used to reduce the size of the active components (25 to 70kHz). Infineon's high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.

Documents

Technical documentation and resources