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UES806HR2

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Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 50A, 400V, 50NS DO-5

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DocumentsUES804-6(HR2)

UES806HR2

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 50A, 400V, 50NS DO-5

Deep-Dive with AI

DocumentsUES804-6(HR2)

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationUES806HR2UES806 Series
--
Current - Average Rectified (Io)50 A50 A
Current - Reverse Leakage @ Vr70 µA70 µA
Mounting TypeStud MountStud Mount
Operating Temperature - Junction [Max]150 °C150 °C
Operating Temperature - Junction [Min]-55 °C-55 °C
Package / CaseDO-203AB, DO-5, StudDO-203AB, DO-5, Stud
Reverse Recovery Time (trr)50 ns50 ns
Speed200 mA, 500 ns200 - 500 mA
Supplier Device PackageDO-5 (DO-203AB)DO-5 (DO-203AB)
TechnologyStandardStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V400 V
Voltage - Forward (Vf) (Max) @ If1.25 V1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 116.98
Microchip DirectN/A 1$ 125.96
NewarkEach 100$ 116.98
500$ 112.48

UES806 Series

Rectifier Diode Switching 2-Pin 50A, 400V, 50ns DO-5

PartCurrent - Reverse Leakage @ VrSupplier Device PackageReverse Recovery Time (trr)TechnologyVoltage - Forward (Vf) (Max) @ IfCurrent - Average Rectified (Io)Voltage - DC Reverse (Vr) (Max) [Max]Package / CaseMounting TypeSpeedOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]
Microchip Technology
UES806HR2
70 µA
DO-5 (DO-203AB)
50 ns
Standard
1.25 V
50 A
400 V
DO-203AB, DO-5, Stud
Stud Mount
200 mA, 500 ns
150 °C
-55 °C
Microchip Technology
UES806R
Microchip Technology
UES806
70 µA
DO-5 (DO-203AB)
50 ns
Standard
1.25 V
50 A
400 V
DO-203AB, DO-5, Stud
Stud Mount
200 mA, 500 ns
150 °C
-55 °C
Microchip Technology
UES806
Microchip Technology
UES806HR2

Description

General part information

UES806 Series

The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated forward current turned on and off without a heat sink. This forces case temperature increases of 75 ° C at which time the current is removed to simulate worst case applications. The switching times increase relatively little with temperature or at different currents.

Documents

Technical documentation and resources