SIR826DP-T1-GE3

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Vishay Dale

POWER MOSFET, N CHANNEL, 80 V, 60 A, 0.004 OHM, SOIC, SURFACE MOUNT

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SIR826DP-T1-GE3

Active

Vishay Dale

POWER MOSFET, N CHANNEL, 80 V, 60 A, 0.004 OHM, SOIC, SURFACE MOUNT

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Description Specifications Series Pricing CAD Documents

Description

General part information

SIR826 Series

The SIR826DP-T1-GE3 is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for fixed telecom, DC-to-DC converter, POL and primary and secondary side switch applications.

Technical Specifications

Parameters and characteristics for this part

Specification	SIR826DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	90 nC
Input Capacitance (Ciss) (Max)	2900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.25 W
Rds On (Max)	4.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.8 V

SIR826 Series

Part	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Technology	Mounting Type	Power Dissipation (Max)	FET Type	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SIR826DP-T1-RE3	2900 pF	PowerPAK® SO-8	10 V	4.5 V	20 V	80 V	-55 °C	150 °C	PowerPAK® SO-8	60 A	MOSFET (Metal Oxide)	Surface Mount	104 W	N-Channel	4.8 mOhm	90 nC	2.8 V
Vishay Dale SIR826ADP-T1-GE3	2800 pF	PowerPAK® SO-8	10 V	4.5 V	20 V	80 V	-55 °C	150 °C	PowerPAK® SO-8	60 A	MOSFET (Metal Oxide)	Surface Mount	6.25 W 104 W	N-Channel	5.5 mOhm	86 nC	2.8 V
Vishay Dale SIR826DP-T1-GE3	2900 pF	PowerPAK® SO-8	10 V	4.5 V	20 V	80 V	-55 °C	150 °C	PowerPAK® SO-8	60 A	MOSFET (Metal Oxide)	Surface Mount	6.25 W 104 W	N-Channel	4.8 mOhm	90 nC	2.8 V
Vishay Dale SIR826LDP-T1-RE3	3840 pF	PowerPAK® SO-8			20 V	80 V	-55 °C	150 °C	PowerPAK® SO-8	86 A	MOSFET (Metal Oxide)	Surface Mount	5 W 83 W	N-Channel	5 mOhm	91 nC	2.4 V	21.3 A	10 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

SIR826DP-T1-GE3 | Datasheet