
TC58BYG2S0HBAI6
UnknownKioxia America, Inc.
NAND FLASH 1.8V 4GB 24NM SLC NAND (EEPROM)

TC58BYG2S0HBAI6
UnknownKioxia America, Inc.
NAND FLASH 1.8V 4GB 24NM SLC NAND (EEPROM)
Description
General part information
TC58BYG2 Series
FLASH - NAND (SLC) Memory IC 4Gbit Parallel 25 ns 67-VFBGA (6.5x8)
Technical Specifications
Parameters and characteristics for this part
| Specification | TC58BYG2S0HBAI6 |
|---|---|
| Access Time | 25 ns |
| Memory Depth | 512 M |
| Memory Format | FLASH |
| Memory Interface (Type) | Parallel |
| Memory Size | 4 Gbit |
| Memory Type | Non-Volatile |
| Memory Width | 8 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 67-VFBGA |
| Package Length | 6.5 mm |
| Package Name | 67-VFBGA |
| Package Width | 8 mm |
| Technology | FLASH - NAND (SLC) |
| Voltage - Supply (Maximum) | 1.95 V |
| Voltage - Supply (Minimum) | 1.7 V |
| Write Cycle Time - Page | 25 ns |
| Write Cycle Time - Word | 25 ns |
Pricing
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