TK6A80E,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 800V 6A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 800V 6A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK6A80E,S4X

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs [Max]	1.7 Ohm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	FET Type
Toshiba Semiconductor and Storage TK6A80E,S4X	TO-220-3 Full Pack	1.7 Ohm	MOSFET (Metal Oxide)	10 V	4 V	6 A	TO-220SIS	32 nC	45 W	150 °C	Through Hole	800 V	1350 pF	30 V	N-Channel

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General part information

N-Channel 800 V 6A (Ta) 45W (Tc) Through Hole TO-220SIS

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