TPH11006NL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0114 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
TPH11006NL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0114 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
Description
General part information
TPH11006NL Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0114 Ω@10V, SOP Advance, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH11006NL,LQ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 17 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 23 nC |
| Input Capacitance (Ciss) (Max) | 2000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-SOP Advance |
| Package Width | 5 mm |
| Power Dissipation (Max) | 1.6 W, 34 W |
| Rds On (Max) | 11.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TPH11006NL,LQ | Datasheet
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Maximum Ratings: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Motor Control (Vacuum Cleaners)
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Structures and Characteristics: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Simplified CFD Model Application Note
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET SPICE model grade
Electrical Characteristics: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
MOSFET Self-Turn-On Phenomenon
Avalanche energy calculation
TPH11006NL Data sheet/Japanese
Resonant Circuits and Soft Switching
Hints and Tips for Thermal Design part3
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
MOSFET Secondary Breakdown
RC Snubbers for Step-Down Converters
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0