Specification	SSM3J117TU,LF

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max)	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-SMD, Flat Leads
Package Name	UFM
Power Dissipation (Max)	500 mW
Rds On (Max)	117 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.6 V

SSM3J117TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.117 Ω@10V, SOT-323F(UFM)

Part	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Operating Temperature	Input Capacitance (Ciss) (Max)	FET Type	Package / Case	Rds On (Max)	Vgs (Max)	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3J117TU,LF	MOSFET (Metal Oxide)	Surface Mount	30 V	4 V	10 V	UFM	2 A	2.6 V	150 °C	280 pF	P-Channel	3-SMD Flat Leads	117 mOhm	20 V	500 mW

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