Specification	IR20153STRPBF

Channel Type	Single
Current - Peak Output (Sink)	1.5 A
Current - Peak Output (Source)	1.5 A
Driven Configuration	High-Side
Fall Time (Typ)	100 ns
Gate Channel	N-Channel
Gate Type	N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	150 V
Input Type	Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	1.4 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	200 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	5 V

IR20153 Series

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package Length	Package Name	Package Width	Driven Configuration	Rise Time (Typ)	Fall Time (Typ)	Channel Type	High Side Voltage - Max (Bootstrap)	Operating Temperature (Min)	Operating Temperature (Max)	Input Type	Logic Voltage - VIH	Logic Voltage - VIL	Mounting Type	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Gate Channel
INFINEON IR20153SPBF	MOSFET N-Channel MOSFET	5 V	20 V	0.154 in	8-SOIC	3.9 mm	High-Side	200 ns	100 ns	Single	150 V	-55 °C	150 °C	Inverting	3 V	1.4 V	Surface Mount	1	1.5 A	1.5 A	N-Channel
INFINEON IR20153STRPBF	MOSFET N-Channel MOSFET	5 V	20 V	0.154 in	8-SOIC	3.9 mm	High-Side	200 ns	100 ns	Single	150 V	-55 °C	150 °C	Inverting	3 V	1.4 V	Surface Mount	1	1.5 A	1.5 A	N-Channel

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