Specification	SSM3K15ACT,L3F

Current - Continuous Drain (Id) (Ta)	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	13.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-101, SOT-883
Package Name	CST3
Power Dissipation (Max)	100 mW
Rds On (Max)	3.6 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.5 V

SSM3K15ACT Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-883(CST3)

Part	Package / Case	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Mounting Type	FET Type	Vgs(th) (Max)	Technology	Package Name	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature
Toshiba Semiconductor and Storage SSM3K15ACT,L3F	SC-101 SOT-883	3.6 Ohm	4 V	2.5 V	100 mW	Surface Mount	N-Channel	1.5 V	MOSFET (Metal Oxide)	CST3	13.5 pF	30 V	20 V	100 mA	150 °C

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