Specification	IPN70R1K0CEATMA1

Current - Continuous Drain (Id) (Tc)	7.4 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14.9 nC, 14.9 nC
Input Capacitance (Ciss) (Max)	328 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-261AA, TO-261-4
Package Name	PG-SOT223
Power Dissipation (Max)	5 W
Rds On (Max)	1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPN70R1 Series

Part	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package / Case	FET Type	Technology	Package Name
INFINEON IPN70R1K0CEATMA1	7.4 A	328 pF	20 V	1 Ohm	700 V	14.9 nC 14.9 nC	Surface Mount	5 W	10 V	-40 °C	150 °C	3.5 V	TO-261-4 TO-261AA	N-Channel	MOSFET (Metal Oxide)	PG-SOT223
INFINEON IPN70R1K2P7SATMA1	4.5 A	174 pF	16 V	1.2 Ohm	700 V	4.8 nC	Surface Mount	6.3 W	10 V	-40 °C	150 °C	3.5 V	TO-261-4 TO-261AA	N-Channel	MOSFET (Metal Oxide)	PG-SOT223
INFINEON IPN70R1K4P7SATMA1	4 A	158 pF	16 V	1.4 Ohm	700 V	4.7 nC	Surface Mount	6.2 W	10 V	-40 °C	150 °C	3.5 V	TO-261-4 TO-261AA	N-Channel	MOSFET (Metal Oxide)	PG-SOT223

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