STF34NM60ND

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STMicroelectronics

TRANS MOSFET N-CH 600V 29A 3-PIN(3+TAB) TO-220FP TUBE

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STF34NM60ND

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STMicroelectronics

TRANS MOSFET N-CH 600V 29A 3-PIN(3+TAB) TO-220FP TUBE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF34NM60ND

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80.4 nC
Input Capacitance (Ciss) (Max) @ Vds	2785 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STF34N65M5 Series

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in TO-220FP package

Part	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STF34NM60ND	5 V	Through Hole	TO-220-3 Full Pack	TO-220FP	110 mOhm	40 W	25 V	600 V	29 A	150 °C	10 V	MOSFET (Metal Oxide)	2785 pF	N-Channel	80.4 nC
STMicroelectronics STF34N65M5	5 V	Through Hole	TO-220-3 Full Pack	TO-220FP	110 mOhm		25 V	650 V	28 A		10 V	MOSFET (Metal Oxide)	2590 pF	N-Channel		35 W	-55 °C	150 °C	70 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 5.56

Description

General part information

STF34N65M5 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

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Technical documentation and resources