Specification	IXTP180N085T

Current - Continuous Drain (Id) (Tc)	180 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	170 nC
Input Capacitance (Ciss) (Max)	7500 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	430 W
Rds On (Max)	5.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXTP180 Series

Part	Vgs(th) (Max)	Rds On (Max)	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package Name	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	FET Type	Input Capacitance (Ciss) (Max)	Mounting Type
LITTELFUSE IXTP180N085T	4 V	5.5 mOhm	MOSFET (Metal Oxide)	85 V	10 V	20 V	TO-220-3	170 nC	-55 °C	175 °C	430 W	TO-220-3	180 A	N-Channel	7500 pF	Through Hole
LITTELFUSE IXTP180N10T	4.5 V	6.4 mOhm	MOSFET (Metal Oxide)	100 V	10 V	30 V	TO-220-3	151 nC	-55 °C	175 °C	480 W	TO-220-3	180 A	N-Channel	6900 pF	Through Hole
LITTELFUSE IXTP180N10T	4.5 V	6.4 mOhm	MOSFET (Metal Oxide)	100 V	10 V	30 V	TO-220-3	151 nC	-55 °C	175 °C	480 W	TO-220-3	180 A	N-Channel	6900 pF	Through Hole

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