Specification	SIDR578EP-T1-RE3

Current - Continuous Drain (Id) (Ta)	17.4 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	49 nC, 49 nC
Input Capacitance (Ciss) (Max)	2540 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8DC
Power Dissipation (Max)	150 W, 7.5 W
Rds On (Max)	8.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SIDR578 Series

Part	Package Name	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Mounting Type	Rds On (Max)	FET Type
Vishay Dale SIDR578EP-T1-RE3	PowerPAK® SO-8DC	17.4 A	7.5 W 150 W	49 nC 49 nC	-55 °C	175 °C	150 V	MOSFET (Metal Oxide)	20 V	2540 pF	PowerPAK® SO-8	10 V	7.5 V	4 V	Surface Mount	8.8 mOhm	N-Channel

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