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IXFT26N60Q - TO-268

IXFT26N60Q

Obsolete
IXYS

MOSFET N-CH 600V 26A TO268

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IXFT26N60Q - TO-268

IXFT26N60Q

Obsolete
IXYS

MOSFET N-CH 600V 26A TO268

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFT26N60Q
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs200 nC
Input Capacitance (Ciss) (Max) @ Vds5100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)360 W
Rds On (Max) @ Id, Vgs250 mOhm
Supplier Device PackageTO-268AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXFT26 Series

N-Channel 600 V 26A (Tc) 360W (Tc) Surface Mount TO-268AA

Documents

Technical documentation and resources

No documents available