P2500MHA0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 25A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 25A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	P2500MHA0G

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	DO-201AD, Axial
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	870 mV

Part	Grade	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Speed	Qualification	Technology	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Taiwan Semiconductor Corporation P2500MHA0G	Automotive	870 mV	Through Hole	Standard Recovery >500ns	200 mA	AEC-Q101	Standard	25 A	DO-201AD	1000 V	5 µA	DO-201AD Axial	-50 °C	175 ░C
Taiwan Semiconductor Corporation P2500M A0G		870 mV	Through Hole	Standard Recovery >500ns	200 mA		Standard	25 A	DO-201AD	1000 V	5 µA	DO-201AD Axial	-50 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 25A Through Hole DO-201AD

Technical documentation and resources