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Description

General part information

HMC-ALH508-DIE Series

The HMC-ALH508 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH508 features 13 dB of small signal gain, 4.5 dB of noise figure and an output power of +7 dBm at 1 dB compression from two supply voltages at 2.1V and 2.4V respectively. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsShort Haul / High Capacity LinksWireless LANsAutomotive RadarMilitary & SpaceE-Band Communication Systems

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC-ALH508
Current - Supply30 mA
Frequency (Max)86 GHz
Frequency (Min)71 GHz
Gain13 dB
Mounting TypeSurface Mount
Noise Figure4.5 dB
P1dB7 dBm
Package / CaseDie
Package NameDie
RF TypeGeneral Purpose
Test Frequency (Maximum)86 GHz
Test Frequency (Minimum)71 GHz
Voltage - Supply2.4 V

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