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TK290P60Y - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.29 Ω@10V, DPAK, DTMOSⅤ

TK5R1P08QM,RQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0051 Ω@10V, DPAK, U-MOSⅩ-H

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TK290P60Y - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.29 Ω@10V, DPAK, DTMOSⅤ

TK5R1P08QM,RQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0051 Ω@10V, DPAK, U-MOSⅩ-H

Find alt

Description

General part information

TK5R1P08QM Series

12V - 300V MOSFETs, N-ch MOSFET, 80 V, 0.0051 Ω@10V, DPAK, U-MOSⅩ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK5R1P08QM,RQ
Current - Continuous Drain (Id) (Tc)84 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)56 nC
Input Capacitance (Ciss) (Max)3980 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power Dissipation (Max)104 W
Rds On (Max)5.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

MOSFET Self-Turn-On Phenomenon
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Simplified CFD Model Application Note
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Derating of the MOSFET Safe Operating Area
Calculating the Temperature of Discrete Semiconductor Devices
RC Snubbers for Step-Down Converters
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Electrical Characteristics: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET SPICE model grade
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Structures and Characteristics: Power MOSFET Application Notes
TK5R1P08QM Data sheet/Japanese
Avalanche energy calculation
MOSFET Secondary Breakdown
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Motor Control (Vacuum Cleaners)
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
TK5R1P08QM Data sheet/English
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Resonant Circuits and Soft Switching
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0