IXXQ30N60B3M

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IXYS

TRANSISTOR: IGBT; GENX3™; 600V; 19A; 90W; TO3PF

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Active

IXYS

TRANSISTOR: IGBT; GENX3™; 600V; 19A; 90W; TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	IXXQ30N60B3M

Current - Collector (Ic) (Max) [Max]	33 A
Current - Collector Pulsed (Icm)	140 A
Gate Charge	39 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	90 W
Reverse Recovery Time (trr)	36 ns
Supplier Device Package	TO-3P
Switching Energy	800 µJ, 550 µJ
Td (on/off) @ 25°C [custom]	23 ns
Td (on/off) @ 25°C [custom]	150 ns
Test Condition	15 V, 400 V, 10 Ohm, 24 A
Vce(on) (Max) @ Vge, Ic	1.85 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Reverse Recovery Time (trr)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Test Condition	Gate Charge	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
IXYS IXXQ30N60B3M	36 ns	Through Hole	33 A	90 W	1.85 V	10 Ohm 15 V 24 A 400 V	39 nC	140 A	-55 °C	175 ░C	SC-65-3 TO-3P-3	600 V	TO-3P	550 µJ 800 µJ	23 ns	150 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600 V 33 A 90 W Through Hole TO-3P

Technical documentation and resources

No documents available