TK6R7A10PL,S4X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0067 Ω@10V, TO-220SIS, U-MOSⅨ-H
TK6R7A10PL,S4X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0067 Ω@10V, TO-220SIS, U-MOSⅨ-H
Description
General part information
TK6R7A10PL Series
12V - 300V MOSFETs, N-ch MOSFET, 100 V, 0.0067 Ω@10V, TO-220SIS, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TK6R7A10PL,S4X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 56 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 58 nC, 58 nC |
| Input Capacitance (Ciss) (Max) | 3455 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 42 W |
| Rds On (Max) | 6.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Structures and Characteristics: Power MOSFET Application Notes
Simplified CFD Model Application Note
Electrical Characteristics: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET SPICE model grade
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET Self-Turn-On Phenomenon
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
MOSFET Secondary Breakdown
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Derating of the MOSFET Safe Operating Area
Motor Control (Vacuum Cleaners)
TK6R7A10PL Data sheet/English
Resonant Circuits and Soft Switching
TK6R7A10PL Data sheet/Japanese
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Avalanche energy calculation
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Hints and Tips for Thermal Design part3
Calculating the Temperature of Discrete Semiconductor Devices
Maximum Ratings: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices