Specification	SISHA14DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	19.7 A
Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	29 nC
Input Capacitance (Ciss) (Max)	1450 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8SH
Package Name	PowerPAK® 1212-8SH
Power Dissipation (Max)	3.57 W, 26.5 W
Rds On (Max)	5.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.2 V

SISHA14 Series

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Gate Charge (Max)	Rds On (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	FET Type	Package Name	Mounting Type
Vishay Dale SISHA14DN-T1-GE3	1450 pF	3.57 W 26.5 W	PowerPAK® 1212-8SH	-16 V	20 V	10 V	4.5 V	MOSFET (Metal Oxide)	29 nC	5.1 mOhm	2.2 V	30 V	-55 °C	150 °C	19.7 A	20 A	N-Channel	PowerPAK® 1212-8SH	Surface Mount

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