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PSMN2R0-30YLDX

PSMN2R0-30YLDX

Active
Nexperia USA Inc.

N-CHANNEL 30 V, 2.0 MΩ LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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PSMN2R0-30YLDX

PSMN2R0-30YLDX

Active
Nexperia USA Inc.

N-CHANNEL 30 V, 2.0 MΩ LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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Description

General part information

PSMN2R0-30YLD Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN2R0-30YLDX
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)46 nC
Input Capacitance (Ciss) (Max)2969 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-669, SC-100
Package NameLFPAK56, Power-SO8
Power Dissipation (Max)142 W
Rds On (Max)2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

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CAD

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