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TK2K2A60F,S4X

TK2K2A60F,S4X

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Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 2.2 Ω@10V, TO-220SIS, Π-MOSⅨ

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TK2K2A60F,S4X

TK2K2A60F,S4X

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 2.2 Ω@10V, TO-220SIS, Π-MOSⅨ

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Description

General part information

TK2K2A60F Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 2.2 Ω@10V, TO-220SIS, π-MOSⅨ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK2K2A60F,S4X
Current - Continuous Drain (Id) (Ta)3.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)13 nC
Input Capacitance (Ciss) (Max)450 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)30 W
Rds On (Max)2.2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TK2K2A60F,S4X | Datasheet
Avalanche energy calculation
Maximum Ratings: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
RC Snubbers for Step-Down Converters
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Simplified CFD Model Application Note
Structures and Characteristics: Power MOSFET Application Notes
TK2K2A60F Data sheet/Japanese
Resonant Circuits and Soft Switching
Calculating the Temperature of Discrete Semiconductor Devices
Motor Control (Vacuum Cleaners)
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Secondary Breakdown
MOSFET SPICE model grade
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Hints and Tips for Thermal Design part3
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Derating of the MOSFET Safe Operating Area
Electrical Characteristics: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0