IRF1404PBF

NRND

INFINEON

POWER MOSFET, N CHANNEL, 40 V, 202 A, 0.004 OHM, TO-220AB, THROUGH HOLE

IRF1404PBF

NRND

INFINEON

POWER MOSFET, N CHANNEL, 40 V, 202 A, 0.004 OHM, TO-220AB, THROUGH HOLE

Description Specifications Series Pricing CAD Documents

Description

General part information

IRF1404 Series

The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1404PBF

Current - Continuous Drain (Id) (Tc)	202 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	196 nC
Input Capacitance (Ciss) (Max)	5669 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	333 W
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF1404 Series

Part	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Technology	FET Type	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Package / Case
INFINEON IRF1404ZSTRLPBF	180 A	40 V	Surface Mount	20 V	4340 pF	10 V	150 nC	MOSFET (Metal Oxide)	N-Channel	3.7 mOhm	PG-TO263-3	-55 °C	175 °C	4 V	200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IRF1404STRLPBF	162 A	40 V	Surface Mount	20 V	7360 pF	10 V	200 nC	MOSFET (Metal Oxide)	N-Channel	4 mOhm	D2PAK	-55 °C	175 °C	4 V	3.8 W 200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON 94-2110	162 A	40 V	Surface Mount	20 V	7360 pF	10 V	200 nC	MOSFET (Metal Oxide)	N-Channel	4 mOhm	D2PAK	-55 °C	175 °C	4 V	3.8 W 200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IRF1404PBF	202 A	40 V	Through Hole	20 V	5669 pF	10 V	196 nC	MOSFET (Metal Oxide)	N-Channel	4 mOhm	TO-220AB	-55 °C	175 °C	4 V	333 W	TO-220-3
INFINEON 64-2105PBF	75 A	40 V	Through Hole	20 V	4340 pF	10 V	150 nC	MOSFET (Metal Oxide)	N-Channel	3.7 mOhm	TO-262	-55 °C	175 °C	4 V	200 W	I2PAK TO-262-3 Long Leads TO-262AA
INFINEON IRF1404LPBF	162 A	40 V	Through Hole	20 V	7360 pF	10 V	200 nC	MOSFET (Metal Oxide)	N-Channel	4 mOhm	TO-262	-55 °C	175 °C	4 V	3.8 W 200 W	I2PAK TO-262-3 Long Leads TO-262AA
INFINEON IRF1404ZPBF	180 A	40 V	Through Hole	20 V	4340 pF	10 V	150 nC	MOSFET (Metal Oxide)	N-Channel	3.7 mOhm	TO-220AB	-55 °C	175 °C	4 V	200 W	TO-220-3
INFINEON IRF1404STRRPBF	162 A	40 V	Surface Mount	20 V	7360 pF	10 V	200 nC	MOSFET (Metal Oxide)	N-Channel	4 mOhm	D2PAK	-55 °C	175 °C	4 V	3.8 W 200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON 64-2042	75 A	40 V	Through Hole	20 V	4340 pF	10 V	150 nC	MOSFET (Metal Oxide)	N-Channel	3.7 mOhm	TO-262	-55 °C	175 °C	4 V	220 W	I2PAK TO-262-3 Long Leads TO-262AA

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IRF1404PBF | Datasheet

IR Part Numbering System