Specification	IXDN502SIA

Channel Type	Independent
Current - Peak Output (Sink)	2 A
Current - Peak Output (Source)	2 A
Driven Configuration	Low-Side
Fall Time (Typ)	6.5 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, N-Channel, P-Channel MOSFET, MOSFET
Input Type	Non-Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	7.5 ns
Voltage - Supply (Maximum)	30 VDC
Voltage - Supply (Minimum)	4.5 V

IXDN502 Series

Part	Gate Type	Input Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Gate Channel	Channel Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Fall Time (Typ)	Rise Time (Typ)	Package Length	Package Width	Number of Drivers	Logic Voltage - VIL	Logic Voltage - VIH	Mounting Type	Driven Configuration	Package / Case
LITTELFUSE IXDN502PI	IGBT MOSFET N-Channel P-Channel MOSFET	Non-Inverting	2 A	2 A	-55 °C	150 °C	8-DIP	N-Channel P-Channel	Independent	4.5 V	30 VDC	6.5 ns	7.5 ns	0.3 in	7.62 mm	2	0.8 V	3 V	Through Hole	Low-Side
LITTELFUSE IXDN502SIA	IGBT MOSFET N-Channel P-Channel MOSFET	Non-Inverting	2 A	2 A	-55 °C	150 °C	8-SOIC	N-Channel P-Channel	Independent	4.5 V	30 VDC	6.5 ns	7.5 ns	0.154 in	3.9 mm	2	0.8 V	3 V	Surface Mount	Low-Side
LITTELFUSE IXDN502D1T/R	IGBT MOSFET N-Channel P-Channel MOSFET	Non-Inverting	2 A	2 A	-55 °C	150 °C	6-DFN	N-Channel P-Channel	Independent	4.5 V	30 VDC	6.5 ns	7.5 ns	4 mm	5 mm	2	0.8 V	3 V	Surface Mount	Low-Side	6-VDFN Exposed Pad

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