Specification	SI4880DY-T1-E3

Current - Continuous Drain (Id) (Ta)	13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	25 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max)	8.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	1.8 V

SI4880 Series

Part	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	FET Type	Rds On (Max)	Package Name	Package Length	Package Width	Vgs (Max)	Mounting Type	Gate Charge (Max)
Vishay Dale SI4880DY-T1-E3	13 A	2.5 W	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V	4.5 V	30 V	1.8 V	N-Channel	8.5 mOhm	8-SOIC	0.154 in	3.9 mm	25 V	Surface Mount	25 nC

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