Description
General part information
IPB044 Series
The OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on)(up to 25% compared to the next best alternative in SuperSO8) and Qrrwithout compromising FOMgdand FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Qrr= 26 nC in SuperSO8) increases commutation ruggedness.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB044N15N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 174 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 100 nC |
| Input Capacitance (Ciss) (Max) | 8000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 6 Leads |
| Package Name | TO-263-7, D2PAK, PG-TO263-7 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) | 4.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.6 V |
Pricing
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CAD
3D models and CAD resources for this part