Part	Mounting Type	Qualification	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id)	Grade	FET Feature	Package Name	Power - Max	Package / Case	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)
INFINEON IPG20N06S2L35ATMA1	Surface Mount	AEC-Q101	2	N-Channel	Dual	20 A	Automotive	Logic Level Gate	PG-TDSON-8-4	65 VA	8-PowerVDFN	35 mOhm	55 V	23 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	790 pF	2 V
INFINEON IPG20N06S2L50ATMA1	Surface Mount		2	N-Channel	Dual	20 A		Logic Level Gate	PG-TDSON-8-4	51 W	8-PowerVDFN		55 V	17 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	560 pF	2 V
INFINEON IPG20N06S3L-35	Surface Mount		2	N-Channel	Dual	20 A		Logic Level Gate	PG-TDSON-8-4	30 W	8-PowerVDFN	35 mOhm	55 V	23 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	1730 pF	2.2 V
INFINEON IPG20N04S4L07ATMA1	Surface Mount	AEC-Q101	2	N-Channel	Dual	20 A	Automotive	Logic Level Gate	PG-TDSON-8-4	65 VA	8-PowerVDFN	7.2 mOhm	40 V	50 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	3980 pF	2.2 V
INFINEON IPG20N06S2L65AUMA1
INFINEON IPG20N04S4L08ATMA1	Surface Mount	AEC-Q101	2	N-Channel	Dual	20 A	Automotive	Logic Level Gate	PG-TDSON-8-4	54 W	8-PowerVDFN	8.2 mOhm	40 V	39 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	3050 pF	2.2 V
INFINEON IPG20N10S436AATMA1	Surface Mount Wettable Flank	AEC-Q101	2	N-Channel	Dual	20 A	Automotive		PG-TDSON-8-10	43 VA	8-PowerVDFN	36 mOhm	100 V	15 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	990 pF	3.5 V
INFINEON IPG20N04S4L08AATMA1	Surface Mount Wettable Flank	AEC-Q101	2	N-Channel	Dual	20 A	Automotive	Logic Level Gate	PG-TDSON-8-10	54 W	8-PowerVDFN	8.2 mOhm	40 V	39 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	3050 pF	2.2 V
INFINEON IPG20N04S412AATMA1	Surface Mount Wettable Flank	AEC-Q101	2	N-Channel	Dual	20 A	Automotive		PG-TDSON-8-10	41 W	8-PowerVDFN	12.2 mOhm	40 V	18 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	1470 pF	4 V
INFINEON IPG20N04S408ATMA1	Surface Mount		2	N-Channel	Dual	20 A			PG-TDSON-8-4	65 VA	8-PowerVDFN	7.6 mOhm	40 V	36 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	2940 pF	4 V

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