Specification	C3M0032120J1-TR

Current - Continuous Drain (Id) (Tc)	68 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	111 nC
Input Capacitance (Ciss) (Max)	3424 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Leads	7 Leads
Package Name	TO-263-7, D2PAK
Power Dissipation (Max)	277 W
Rds On (Max)	43 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	15 V
Vgs(th) (Max)	3.6 V

C3M0032120 Series

Part	Vgs (Max) Negative	Vgs (Max) Positive	Package Name	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Package / Case	Power Dissipation (Max)	Operating Temperature (Max)	Operating Temperature (Min)	Technology	Rds On (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package Leads
Wolfspeed, Inc. C3M0032120K	-4 V	15 V	TO-247-4L	3357 pF	118 nC	TO-247-4	283 W	175 °C	-40 °C	SiCFET (Silicon Carbide)	43 mOhm	N-Channel	63 A	3.6 V	1200 V	15 V	Through Hole
Wolfspeed, Inc. C3M0032120J1-TR	-4 V	15 V	D2PAK TO-263-7	3424 pF	111 nC		277 W	150 °C	-40 °C	SiCFET (Silicon Carbide)	43 mOhm	N-Channel	68 A	3.6 V	1200 V	15 V	Surface Mount	7 Leads
Wolfspeed, Inc. C3M0032120J1	-4 V	15 V	D2PAK TO-263-7	3424 pF	111 nC		277 W	150 °C	-40 °C	SiCFET (Silicon Carbide)	43 mOhm	N-Channel	68 A	3.6 V	1200 V	15 V	Surface Mount	7 Leads

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