TPN2R903PL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0029 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
TPN2R903PL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0029 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
Description
General part information
TPN2R903PL Series
12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0029 Ω@10V, TSON Advance, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN2R903PL,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 70 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 26 nC |
| Input Capacitance (Ciss) (Max) | 2300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.1 mm |
| Package Name | 8-TSON Advance |
| Package Width | 3.1 mm |
| Power Dissipation (Max) | 630 mW, 75 W |
| Rds On (Max) | 2.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.1 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Simplified CFD Model Application Note
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
TPN2R903PL Data sheet/English
Motor Control (Vacuum Cleaners)
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET Self-Turn-On Phenomenon
MOSFET SPICE model grade
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Maximum Ratings: Power MOSFET Application Notes
TPN2R903PL Data sheet/Japanese
RC Snubbers for Step-Down Converters
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Resonant Circuits and Soft Switching
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Avalanche energy calculation
Structures and Characteristics: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
MOSFET Secondary Breakdown