2SC4215-Y(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 30V 550MHZ USM

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Toshiba Semiconductor and Storage

RF TRANS NPN 30V 550MHZ USM

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4215-Y(TE85L,F)

Current - Collector (Ic) (Max) [Max]	20 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	550 MHz
Gain [Max]	23 dB
Gain [Min]	17 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	5 dB
Noise Figure (dB Typ @ f) [Min]	2 dB
Operating Temperature	125 ¯C
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Supplier Device Package	SC-70
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]	Mounting Type	Power - Max [Max]	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Gain [Min]	Gain [Max]	Operating Temperature	Package / Case
Toshiba Semiconductor and Storage 2SC4215-Y(TE85L,F)	SC-70	100	5 dB	2 dB	Surface Mount	100 mW	550 MHz	NPN	20 mA	30 V	17 dBi	23 dB	125 ¯C	SC-70 SOT-323

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General part information

RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount SC-70

Technical documentation and resources