Specification	SIR5808DP-T1-RE3

Current - Continuous Drain (Id) (Ta)	18.8 A
Current - Continuous Drain (Id) (Tc)	66.8 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Input Capacitance (Ciss) (Max)	1210 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5.2 W, 65.7 W
Rds On (Max)	157 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIR5808 Series

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package Name	Technology	Vgs (Max)	Mounting Type	Power Dissipation (Max)
Vishay Dale SIR5808DP-T1-RE3	157 mOhm	1210 pF	PowerPAK® SO-8	10 V	7.5 V	66.8 A	18.8 A	24 nC 24 nC	N-Channel	-55 °C	150 °C	4 V	80 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	30 V	Surface Mount	5.2 W 65.7 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources