STD8NM60ND

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 600V 7A 3-PIN(2+TAB) DPAK T/R

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Obsolete

STMicroelectronics

TRANS MOSFET N-CH 600V 7A 3-PIN(2+TAB) DPAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	STD8NM60ND

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs [Max]	700 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Supplier Device Package	Mounting Type	Operating Temperature	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
STMicroelectronics STD8NM60ND	700 mOhm	7 A	560 pF	22 nC	70 W	MOSFET (Metal Oxide)	DPAK	Surface Mount	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	10 V	600 V	30 V	N-Channel
STMicroelectronics STD8NM60N-1		7 A	560 pF		70 W	MOSFET (Metal Oxide)	IPAK	Through Hole		IPAK TO-251-3 Short Leads TO-251AA	4 V	10 V	600 V	25 V	N-Channel	-55 °C	150 °C	19 nC	650 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.54

General part information

N-Channel 600 V 7A (Tc) 70W (Tc) Surface Mount DPAK

Technical documentation and resources