PSMN1R4-100ASEJ

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Nexperia USA Inc.

N-CHANNEL, 100 V, 1.36 MOHM, MOSFET WITH ENHANCED SOA IN CCPAK1212 PACKAGE

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PSMN1R4-100ASEJ

Active

Nexperia USA Inc.

N-CHANNEL, 100 V, 1.36 MOHM, MOSFET WITH ENHANCED SOA IN CCPAK1212 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN1R4-100ASE Series

N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R4-100ASEJ

Current - Continuous Drain (Id) (Tc)	340 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	366 nC
Input Capacitance (Ciss) (Max)	26023 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Features	Exposed Pad
Package Length	0.37 in
Package Name	12-BESOP, CCPAK1212
Package Width	9.4 mm
Power Dissipation (Max)	935 W
Rds On (Max)	1.36 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.6 V

PSMN1R4-100ASE Series

N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Part	Technology	Mounting Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package Name	Package Features	Package Width	Package Length	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)
Nexperia USA Inc. PSMN1R4-100ASEJ	MOSFET (Metal Oxide)	Surface Mount	340 A	10 V	1.36 mOhm	26023 pF	366 nC	935 W	3.6 V	100 V	12-BESOP CCPAK1212	Exposed Pad	9.4 mm	0.37 in	N-Channel	-55 °C	175 °C	20 V