BUK9V13-40HX

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Nexperia USA Inc.

DUAL N-CHANNEL 40 V, 13 MOHM LOGIC LEVEL MOSFET IN LFPAK56D (HALF-BRIDGE CONFIGURATION)

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BUK9V13-40HX

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Nexperia USA Inc.

DUAL N-CHANNEL 40 V, 13 MOHM LOGIC LEVEL MOSFET IN LFPAK56D (HALF-BRIDGE CONFIGURATION)

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9V13-40H Series

Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9V13-40HX

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Ta)	42 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Max)	19.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1160 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Package Name	LFPAK56D
Power - Max (Ta)	46 W
Qualification	AEC-Q101
Rds On (Max)	13.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.2 V

BUK9V13-40H Series

Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)

Part	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Package Name	Power - Max (Ta)	Rds On (Max)	Channel Count	Configuration - Features	Configuration	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	FET Feature	Mounting Type	Vgs(th) (Max)	Package / Case	Grade	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)
Nexperia USA Inc. BUK9V13-40HX	1160 pF	19.4 nC	LFPAK56D	46 W	13.6 mOhm	2	Half Bridge	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 °C	AEC-Q101	Logic Level Gate	Surface Mount	2.2 V	8-LFPAK56 SOT-1205	Automotive	40 V	42 A