PMXB65ENEZ

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Nexperia USA Inc.

MOSFET N-CH 30V 3.2A DFN1010D-3

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PMXB65ENEZ

Active

Nexperia USA Inc.

MOSFET N-CH 30V 3.2A DFN1010D-3

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMXB65ENE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMXB65ENEZ

Current - Continuous Drain (Id) (Ta)	3.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	295 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-XDFN Exposed Pad
Package Name	DFN1010D-3
Power Dissipation (Max)	8.33 W, 400 mW
Rds On (Max)	0.067 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

PMXB65ENE Series

30 V, N-channel Trench MOSFET

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Vgs (Max)	Gate Charge (Max)	Package Name	FET Type	Rds On (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PMXB65ENEZ	Surface Mount	-55 °C	150 °C	295 pF	3-XDFN Exposed Pad	10 V	4.5 V	MOSFET (Metal Oxide)	20 V	11 nC	DFN1010D-3	N-Channel	0.067 Ohm	8.33 W 400 mW	2.5 V	3.2 A	30 V