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BSZ039N06NSATMA1 - TSDSON-8

BSZ039N06NSATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 3.9 MOHM;

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BSZ039N06NSATMA1 - TSDSON-8

BSZ039N06NSATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 3.9 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ039N06NSATMA1
Current - Continuous Drain (Id) @ 25°C18 A, 40 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
Input Capacitance (Ciss) (Max) @ Vds2500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)69 W, 2.1 W
Supplier Device PackagePG-TSDSON-8-34
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.68
10$ 1.49
25$ 1.34
100$ 1.17
250$ 1.03
500$ 0.91
1000$ 0.72
Digi-Reel® 1$ 1.68
10$ 1.49
25$ 1.34
100$ 1.17
250$ 1.03
500$ 0.91
1000$ 0.72
Tape & Reel (TR) 5000$ 0.64
10000$ 0.61
NewarkEach (Supplied on Cut Tape) 1$ 1.64
10$ 1.18
25$ 1.09
50$ 1.01
100$ 0.92
250$ 0.89
500$ 0.86
1000$ 0.79

Description

General part information

BSZ039 Series

With BSZ039N06NS OptiMOS™ 5 60V power MOSFET Infineon expands its’ high performance MOSFET portfolio for PQFN 3.3x3.3mm package, enabling an increase in system efficiency for target applications such as server power supply and telecom bricks as well as portable chargers. The benefits are clearly visible in terms of a reduced system temperature, the improved performance leads to a more relaxed thermal management contributing further to shrink of the system size.

Documents

Technical documentation and resources

No documents available