Specification	SI2301CDS-T1-GE3

Current - Continuous Drain (Id) (Tc)	3.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	10 nC
Input Capacitance (Ciss) (Max)	405 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	860 mW, 1.6 W
Rds On (Max)	112 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SI2301 Series

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package / Case	Rds On (Max)	Mounting Type	FET Type	Current - Continuous Drain (Id) (Tc)	Technology	Package Name	Gate Charge (Max)
Vishay Dale SI2301CDS-T1-GE3	2.5 V	4.5 V	1.6 W 860 mW	1 V	-55 °C	150 °C	8 V	20 V	405 pF	SC-59 SOT-23-3 TO-236-3	112 mOhm	Surface Mount	P-Channel	3.1 A	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	10 nC

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