Specification	SI7190DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	18.4 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	72 nC
Input Capacitance (Ciss) (Max)	2214 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5.4 W, 96 W
Rds On (Max)	118 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI7190 Series

Part	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	FET Type	Package Name	Vgs (Max)	Vgs(th) (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Power Dissipation (Max)	Gate Charge (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI7190ADP-T1-RE3	14.4 A	4.3 A	860 pF	N-Channel	PowerPAK® SO-8	20 V	4 V	102 mOhm	10 V	7.5 V	250 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	5 W 56.8 W	22.4 nC	Surface Mount	-55 °C	150 °C
Vishay Dale SI7190DP-T1-GE3	18.4 A		2214 pF	N-Channel	PowerPAK® SO-8	20 V	4 V	118 mOhm	10 V	6 V	250 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	5.4 W 96 W	72 nC	Surface Mount	-55 °C	150 °C

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