IRF150P221XKMA1

Obsolete

Infineon Technologies

MOSFET N-CH 150V 186A TO247-3

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Obsolete

Infineon Technologies

MOSFET N-CH 150V 186A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRF150P221XKMA1

Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	341 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.6 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)
Infineon Technologies IRF150P221XKMA1	6000 pF	Through Hole	-55 °C	175 ░C	20 V	N-Channel	MOSFET (Metal Oxide)	10 V	150 V	4.5 mOhm	TO-247-3	100 nC	4.6 V	PG-TO247-3	341 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$