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JANTXV2N3506A

JANTXV2N3506A

Active
Microchip Technology

POWER BJT TO-39 ROHS COMPLIANT: YES

JANTXV2N3506A

JANTXV2N3506A

Active
Microchip Technology

POWER BJT TO-39 ROHS COMPLIANT: YES

Description

General part information

2N3506 Series

This specification covers the performance requirements for NPN, silicon, switching 2N3506 and 2N3507 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/349. Two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: Similar to TO-39 and surface mount version U4. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/349.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N3506A
Current - Collector (Ic) (Max)3 A
DC Current Gain (hFE) (Min)40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Package NameTO-39 (TO-205AD)
Power - Max1 VA
Qualification349, MIL-PRF-19500
Transistor TypeNPN
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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