SIDC04D60F6X1SA2

Obsolete

Infineon Technologies

DIODE GEN PURP 600V 9A DIE

Search across all available documentation for this part.

Obsolete

Infineon Technologies

DIODE GEN PURP 600V 9A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC04D60F6X1SA2

Current - Average Rectified (Io)	9 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
Infineon Technologies SIDC04D60F6X1SA2	-40 °C	175 ░C	Surface Mount	Die	600 V	Die	Standard	Standard Recovery >500ns	200 mA	1.6 V	9 A	27 µA
Infineon Technologies SIDC04D60F6X1SA4	-40 °C	175 ░C	Surface Mount	Die	600 V	Die	Standard	Standard Recovery >500ns	200 mA	1.6 V	9 A	27 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 9A Surface Mount Die

Technical documentation and resources