DMP3035SFG-7

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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DocumentsDatasheet Recommended Soldering Techniques +1

DMP3035SFG-7

Active

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3035SFG-7

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1633 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	950 mW
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

DMP3035SFG Series

NRND = Not Recommended for New Design

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Drain to Source Voltage (Vdss)
Diodes Inc DMP3035SFG-7	950 mW	-55 °C	150 °C	20 mOhm	17 nC	8-PowerVDFN	P-Channel	POWERDI3333-8	25 V	8.5 A	Surface Mount	1633 pF	2.5 V	10 V	5 V	MOSFET (Metal Oxide)	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2000	$ 0.20
		4000	$ 0.18
		6000	$ 0.17
		10000	$ 0.16
		14000	$ 0.16
		20000	$ 0.15
		50000	$ 0.15

Description

General part information

DMP3035SFG Series

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.