JAN2N6650
Active80V PNP POWER BJT THT TO-3 ROHS COMPLIANT: YES
JAN2N6650
Active80V PNP POWER BJT THT TO-3 ROHS COMPLIANT: YES
Description
General part information
JAN2N6650-Darlington Series
This specification covers the performance requirements for PNP silicon, Darlington power, 2N6648, 2N6649 and 2N6650 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/527. The device package outlines is a diamond base, flange mount TO-204-AA package (formerly TO-3) for all encapsulated device types.
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N6650 |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 1 mA |
| DC Current Gain (hFE) (Min) | 1000 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-3, TO-204AA |
| Package Name | TO-204AA (TO-3) |
| Power - Max | 5 VA |
| Qualification | MIL-PRF-19500, 527 |
| Transistor Type | PNP, Darlington |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
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