CEDM8004VL TR PBFREE

Obsolete

Central Semiconductor Corp

MOSFET P-CH 30V 450MA SOT883VL

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Obsolete

Central Semiconductor Corp

MOSFET P-CH 30V 450MA SOT883VL

Technical Specifications

Parameters and characteristics for this part

Specification	CEDM8004VL TR PBFREE

Current - Continuous Drain (Id) @ 25°C	450 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	0.88 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	SOT-883VL
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max) [Max]	Technology	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Central Semiconductor Corp CEDM8004VL TR PBFREE	SC-101 SOT-883	30 V	0.88 nC	150 °C	-65 °C	SOT-883VL	450 mA	1.8 V 4.5 V	Surface Mount	8 V	MOSFET (Metal Oxide)	100 mW	P-Channel	1 V	1.1 Ohm
Central Semiconductor Corp CEDM8004 BK PBFREE	SC-101 SOT-883	30 V	0.88 nC	150 °C	-65 °C	SOT-883	450 mA	1.8 V 4.5 V	Surface Mount	8 V	MOSFET (Metal Oxide)	100 mW	P-Channel	1.1 V	1.1 Ohm
Central Semiconductor Corp CEDM8004 TR PBFREE	SC-101 SOT-883	30 V	0.88 nC	150 °C	-65 °C	SOT-883VL	450 mA	1.8 V 4.5 V	Surface Mount	8 V	MOSFET (Metal Oxide)	100 mW	P-Channel	1 V	1.1 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 450mA (Ta) 100mW (Ta) Surface Mount SOT-883VL

Technical documentation and resources