IXFN210N30P3

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IXYS

MOSFET N-CH 300V 192A SOT227B

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IXYS

MOSFET N-CH 300V 192A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN210N30P3

Current - Continuous Drain (Id) @ 25°C	192 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	268 nC
Input Capacitance (Ciss) (Max) @ Vds	16200 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	1500 W
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	FET Type	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
IXYS IXFN210N30P3	5 V	192 A	20 V	16200 pF	268 nC	10 V	1500 W	-55 °C	150 °C	SOT-227B	SOT-227-4 miniBLOC	N-Channel	Chassis Mount	MOSFET (Metal Oxide)	14.5 mOhm	300 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 32.10

General part information

N-Channel 300 V 192A (Tc) 1500W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available