SN7002NL6433HTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 60V 200MA SOT23-3

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 200MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SN7002NL6433HTMA1

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	PG-SOT23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)
Infineon Technologies SN7002NL6433HTMA1	360 mW	45 pF	PG-SOT23	5 Ohm	SC-59 SOT-23-3 TO-236-3	Surface Mount	N-Channel	200 mA	1.8 V	-55 °C	150 °C	1.5 nC	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 200mA (Ta) 360mW (Ta) Surface Mount PG-SOT23

Technical documentation and resources